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Add to Calendar 11/29/2018 10:00 am 11/29/2018 America/Chicago Institute for Condensed Matter Theory Seminar: "Topological Materials" DESCRIPTION:

Topological materials host various novel quantum phases of electrons which are characterized by band topology and topologically protected surface/edge states. [1] Despite recent progress, intense world-wide research activity in search of new classes of topological materials is continuing unabated. This interest is driven by the need for materials with greater structural flexibility and tunability to enable viable applications in spintronics and quantum computing. We have used first-principles band theory computations to successfully predict many new classes of 3D topologically interesting materials, including Bi2Se3 series, [2] ternary half-Heuslers, [3] TlBiSe2 family, [4] Li2AgSb-class, and GeBi2Te4 family as well as topological crystalline insulator (TCI) SnTe family [5] and Weyl semimetals TaAs, [6,7] SrSi2, [8] (Mo,W)Te2,[9] Ta3S2, and LaAlGe family. [10] I will also highlight our recent work on unconventional chiral fermions in RhSi, [11] cubic Dirac points in LiOsO3, [12], rotaional symmetry protected TCIs [13], and Kramer-Weyl fermions in non-magnetic chiral cyrstals. [14]


[1] A. Bansil, H. Lin, and T. Das, Rev. Mod. Phys. 88, 021004 (2016).
[2] Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009).
[3] H. Lin et al., Nat. Mater. 9, 546 (2010).
[4] H. Lin et al., Phys. Rev. Lett. 105, 036404 (2010).
[5] T. H. Hsieh, H. Lin, J. Liu, W. Duan, A. Bansi, and L. Fu, Nat. Commun. 3, 982 (2012).
[6] S.-M. Huang et al., Nat. Commun. 6, 7373 (2015).
[7] S.-Y. Xu et al., Science 349, 613 (2015).
[8] S.-M. Huang et al., Proc. Natl. Acad. Sci. 113, 1180 (2016).
[9] T.-R. Chang et al., Nat. Commun. 7, 10639 (2016).
[10] S.-Y. Xu et al., Sci. Adv. 3, e1603266 (2017).
[11] G. Chang et al., Phys. Rev. Lett. 119, 206401 (2017).
[12] W. C. Yu et al., Phys. Rev. Mater. 2, 051201 (2018).
[13] X. Zhou et al., Phys. Rev. B in press (2018).
[14] G. Chang et al., Nat. Mater. 17, 978 (2018).

\n\nSPEAKER:

Hsin Lin, Institute of Physics, Academia Sinica, Taipei

190 ESB

false

Institute for Condensed Matter Theory Seminar: "Topological Materials"

Speaker Hsin Lin, Institute of Physics, Academia Sinica, Taipei
Date: 11/29/2018
Time: 10 a.m.
Location:

190 ESB

Sponsor:

Institute for Condensed Matter Theory

Event Type: Seminar/Symposium
 

Topological materials host various novel quantum phases of electrons which are characterized by band topology and topologically protected surface/edge states. [1] Despite recent progress, intense world-wide research activity in search of new classes of topological materials is continuing unabated. This interest is driven by the need for materials with greater structural flexibility and tunability to enable viable applications in spintronics and quantum computing. We have used first-principles band theory computations to successfully predict many new classes of 3D topologically interesting materials, including Bi2Se3 series, [2] ternary half-Heuslers, [3] TlBiSe2 family, [4] Li2AgSb-class, and GeBi2Te4 family as well as topological crystalline insulator (TCI) SnTe family [5] and Weyl semimetals TaAs, [6,7] SrSi2, [8] (Mo,W)Te2,[9] Ta3S2, and LaAlGe family. [10] I will also highlight our recent work on unconventional chiral fermions in RhSi, [11] cubic Dirac points in LiOsO3, [12], rotaional symmetry protected TCIs [13], and Kramer-Weyl fermions in non-magnetic chiral cyrstals. [14]


[1] A. Bansil, H. Lin, and T. Das, Rev. Mod. Phys. 88, 021004 (2016).
[2] Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava, and M. Z. Hasan, Nat. Phys. 5, 398 (2009).
[3] H. Lin et al., Nat. Mater. 9, 546 (2010).
[4] H. Lin et al., Phys. Rev. Lett. 105, 036404 (2010).
[5] T. H. Hsieh, H. Lin, J. Liu, W. Duan, A. Bansi, and L. Fu, Nat. Commun. 3, 982 (2012).
[6] S.-M. Huang et al., Nat. Commun. 6, 7373 (2015).
[7] S.-Y. Xu et al., Science 349, 613 (2015).
[8] S.-M. Huang et al., Proc. Natl. Acad. Sci. 113, 1180 (2016).
[9] T.-R. Chang et al., Nat. Commun. 7, 10639 (2016).
[10] S.-Y. Xu et al., Sci. Adv. 3, e1603266 (2017).
[11] G. Chang et al., Phys. Rev. Lett. 119, 206401 (2017).
[12] W. C. Yu et al., Phys. Rev. Mater. 2, 051201 (2018).
[13] X. Zhou et al., Phys. Rev. B in press (2018).
[14] G. Chang et al., Nat. Mater. 17, 978 (2018).

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